Dual‐Gate GaAs‐Nanowire FET for Room Temperature Charge‐Qubit Operation: A NEGF Approach

The performance of dual-gate GaAs-nanowire field-effect-transistor (FET) is investigated as a charge-qubit device operating at room temperature. In compatibility with the state-of-the-art classical bit technology, it shown that single gate nanowire FET can be replaced by two localized gates to achieve such operation. On application relevant biases gates, voltage tunable quantum dots are created within channel electrostatically controlled single-state-occupancy and interdot coupling leading operation associated electron transport theoretically modeled on basis nonequilibrium Green's function formalism. “initialization” “manipulation” for qubit performed applying suitable voltages, whereas “measurement” executed small drain bias obtain pulse current ≈pA order. A ≈25 MHz frequency coherent oscillation observed characteristic decay time ≈ 70 ns achieved. results suggest dual promising architecture